Photovoltaic element
AssigneeCanon Kabushiki Kaisha
InventorMasafumi Sano
Life of this patent
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Abstract
A photovoltaic element is provided which comprises a support substrate, a first transparent conductive layer formed on the support substrate, a semiconductor layer stacked in the nip-type thereon, and a second transparent conductive layer formed thereon, wherein the n-type semiconductor layer of the nip-type stacked semiconductor layer comprises an amorphous semiconductor layer and a microcrystalline semiconductor layer of a microcrystalline volume percentage of 3-75%, and wherein the i-type semiconductor layer thereof comprises a microcrystalline semiconductor layer. This provides a photovoltaic element with a high photoelectric conversion efficiency at a low cost.
Claims6
A photovoltaic element comprising a conductive substrate having on a support substrate at least one layer of a first transparent conductive layer;
- an n-type semiconductor layer, an i-type semiconductor layer, and a p-type semiconductor layer provided on the conductive substrate substrate in the order mentioned;
- and a second transparent conductive layer further provided thereon, wherein the n-type semiconductor layer comprises at least two layers of an n-type amorphous semiconductor layers and an n-type microcrystalline semiconductor layer of a microcrystalline volume percentage of 3-75% in the order mentioned, and wherein the i-type semiconductor layer comprises an i-type microcrystalline semiconductor layer.
Dependencies are inferred from the claim text.