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US 6,210,988 B1Granted
Polycrystalline silicon germanium films for forming micro-electromechanical systems
AssigneeThe Regents of the University of California
InventorsRoger T. Howe, Andrea Franke, Tsu-Jae King
Life of this patent
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Abstract
This invention relates to micro-electromechanical systems using silicon-germanium films.
Claims43
A process for forming a micro-electromechanical system, comprising:
- depositing onto a substrate a sacrificial layer of silicon- germanium;
- depositing onto the sacrificial layer a structural layer of silicon-germanium, where the germanium content of the sacrificial layer is greater than the germanium content of the structural layer;
- and
- removing at least a portion of the sacrificial layer.
1 more element
A process for forming a micro-electromechanical system, comprising:
- depositing onto a substrate a sacrificial layer of silicon oxide;
- depositing onto the sacrificial layer a structural layer of Si1-xGex, where 0<x≦1, at a temperature of about 650° C. or less;
- and
- removing at least a portion of the sacrificial layer.
1 more element
A process for forming a micro-electromechanical system, comprising:
- depositing onto a substrate a sacrificial layer of polycrystalline germanium;
- depositing onto the sacrificial layer a structural layer of Si1-xGex, where 0<x<1 at a temperature of about 650° C. or less;
- and
- removing at least a portion of the sacrificial layer.
1 more element
A process for forming a micro-electromechanical system, comprising:
- depositing onto a substrate a ground plane layer of Si1-xGex, where 0.8>x>0.6;
- depositing onto the ground plane layer a sacrificial layer;
- depositing onto the sacrificial layer a structural layer of Si1-xGex, where 0<x≦1 at a temperature of about 650° C. or less;
- and
- removing at least a portion of the sacrificial layer.
2 more elements
Dependencies are inferred from the claim text.