Multi-section electro-optical monolithic component

Abstract

A semiconductor electro-optical monolithic component includes at least first and second sections (20, 30) each having respectively a first wave guide (21) and a second wave guide (31) transmitting light, the wave guides being etched in the form of strips and confined between an upper cladding layer (11) doped with carriers of a first type and a lower layer (10A, 10B) doped with carriers of a second type, a third section (40) being disposed between the first and second sections (20, 30) and having a third guide not transmitting light, the third guide being disposed so as to couple the first guide (21) to the said second guide (31). An absorbent layer (70), having a photoluminescence wavelength at least equal to the smallest wavelength of the waves propagating in the first and second wave guides (21, 31), is placed in the said lower layer (10A, 10B) doped with carriers of the second type; the said lower layer (10A, 10B) having an index lower than that of the absorbent layer (70) and that of the said second and third guides (31).

Dependencies are inferred from the claim text.