Highly compact vertical cavity surface emitting lasers
AssigneeXerox Corporation
InventorRobert L. Thornton
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Abstract
The present invention provides a highly compact vertical cavity surface emitting laser structure formed by a lateral oxidation process. Specifically, the present invention allows for the use of well-controlled oxidized regions to bound and to define the aperture of a laser structure in a current controlling oxidation layer, wherein the aperture comprises a conductive region in the oxidation layer. These oxidized regions are formed by the use of a pre-defined bounding pattern of cavities etched in the laser structure, which allow the embedded oxidation layer to be oxidized.
Claims13
A surface emitting laser having a light emitting surface, said laser comprising:
- a substrate;
- a plurality of semiconductor layers formed on said substrate;
- one of said semiconductor layers comprising an active layer having an active region therein;
- a first reflector located on one side of said active layer and a second reflector located on the opposite side of said active layer, at least one of said reflectors allowing a partial transmission of light energy therethrough;
- one of said semiconductor layers being a current controlling layer, said current controlling layer being penetrated by four hollow cavities having a substantially square opening;
- an aperture region in said current controlling layer which controls current flowing through said active region, said aperture region being defined by a conductive region in said current controlling layer bordered by non-conductive regions in said current controlling layer, and wherein one of said non-conductive regions surrounds one of said four hollow cavities;
- and
- first and second electrodes located on said laser device to enable biasing of said active region.
A surface emitting laser having a light emitting surface, said laser comprising:
- a substrate;
- a plurality of semiconductor layers formed on said substrate;
- one of said semiconductor layers comprising an active layer having an active region therein;
- a first reflector located on one side of said active layer and a second reflector located on the opposite side of said active layer, at least one of said reflectors allowing a partial transmission of light energy therethrough;
- one of said semiconductor layers being a current controlling layer, said current controlling layer being penetrated by a plurality of hollow cavities;
- an aperture region in said current controlling layer which controls current flowing through said active region, said aperture region being defined by a conductive region in said current controlling layer bordered by non-conductive regions in said current controlling layer, and wherein one of said non-conductive regions surrounds one of said plurality of hollow cavities;
- and
- first and second electrodes located on said laser device to enable biasing of said active region.
Dependencies are inferred from the claim text.