Semiconductor device capable of cutting off a leakage current in a defective array section
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsHiroyuki Yamauchi, Hironori Akamatsu, Toru Iwata, Keiichi Kusumoto, Satoshi Takahashi, Yutaka Terada, Takashi Hirata
Life of this patent
Estimating the term…
Abstract
The semiconductor device of this invention includes: an array section including a plurality of circuit blocks; a leakage current cutoff section for cutting off a leakage current occurring in at least one of the plurality of circuit blocks in the array section; and a control section for controlling the leakage current cutoff section in accordance with leakage current cutoff information.
Claims21
A semiconductor device comprising:
- an array section including a plurality of circuit blocks;
- a leakage current cutoff section, coupled to the array section, for cutting off a leakage current occurring in at least one of the plurality of circuit blocks in the array section;
- and
- a control section, coupled to the leakage current cutoff section, for controlling the leakage current cutoff section in accordance with leakage current cutoff information;
- wherein the leakage current cutoff section includes:
- a switching element disposed between a power source which supplies electric power to the array section and one of the plurality of circuit blocks;
- and a programmable logic element connected to the switching element, and the control section controls an ON/OFF state of the switching element by programming the programmable logic element in accordance with the leakage current cutoff information.
A semiconductor device according to claim 3,
- wherein the leakage current cutoff section cuts off the leakage current by electrically insulating at least one of the plurality of circuit blocks from the power source which supplies electric power to the array section.
A semiconductor device comprising:
- an array section including a plurality of circuit blocks;
- a leakage current cutoff section, coupled to the array section, for cutting off a leakage current occurring in at least one of the plurality of circuit blocks in the array section;
- and
- a control section, coupled to the leakage current cutoff section, for controlling the leakage current cutoff section in accordance with leakage current cutoff information;
- wherein the leakage current cutoff section includes a fuse disposed between a power source which supplies electric power to the array section and one of the plurality of circuit blocks, and the control section produces position information indicating a position of the fuse to be cut off in accordance with the leakage current cutoff information, and outputs the position information to a laser irradiation device.
A semiconductor device comprising:
- an array section including a plurality of circuit blocks;
- a leakage current cutoff section, coupled to the array section, for cutting off a leakage current occurring in at least one of the plurality of circuit blocks in the array section;
- and
- a control section, coupled to the leakage current cutoff section, for controlling the leakage current cutoff section in accordance with leakage current cutoff information;
- further comprising a system controller which receives mode information indicating either a first mode or a second mode, wherein the semiconductor device operates in the second mode with a lower power consumption than in the first mode, and controls the control section in accordance with the mode information.
Dependencies are inferred from the claim text.