Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AssigneeASM Lithography B.V.
InventorErik R. Loopstra
Life of this patent
Estimating the term…
Loading patent…
AssigneeASM Lithography B.V.
InventorErik R. Loopstra
Estimating the term…
In a lithographic projection apparatus, a time-saving height measurement method is used. While in a projection station (105,108,111) the pattern of a mask (129) is projected on the fields of a first substrate (120), the height of the fields of a second substrate (121) is measured in a measuring station (133). In the measuring station, the height of the substrate fields and the height of the substrate holder (113) are measured by a first height sensor (150) and a second height sensor (160), respectively, and the value of the height of the substrate holder associated with the ideal height of the substrate field is determined for each substrate field. In the projection station, only the height of the substrate holder (111) is controlled by a third height sensor (180). The second and third height sensors are preferably part of a composite XY interferometer system extended with a Z measuring axis.
A method of projecting a mask pattern on a plurality of substrate fields of a substrate provided with a radiation-sensitive layer, by a projection beam and a projection system, wherein prior to introducing a substrate holder with the substrate into the projection beam and underneath the projection system, a surface profile of the substrate is determined for each substrate field, the method comprising:
A product manufactured by a lithography technique using a method of projecting a mask pattern on a plurality of substrate fields of a substrate provided with a radiation-sensitive layer, by a projection beam and a projection system, wherein prior to introducing a substrate holder with the substrate into the projection beam and underneath the projection system, a surface profile of the substrate is determined for each substrate field, the method comprising:
A lithographic projection apparatus suitable for performing a method of projecting a mask pattern on a plurality of substrate fields of a substrate provided with a radiation-sensitive layer, by a projection beam and a projection system, wherein prior to introducing a substrate holder with the substrate into the projection beam and underneath the projection system, a surface profile of the substrate is determined for each substrate field, said apparatus comprising:
Dependencies are inferred from the claim text.