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US 6,208,198 B1Granted
Drain voltage pumping circuit
AssigneeHyundai Electronics Industries Co., Ltd.
InventorJong Seuk Lee
Life of this patent
Estimating the term…
Abstract
A drain voltage pumping circuit comprising: a detection unit for outputting program control signal by detecting the number of bits for programming before programming memory cells on a memory cell array; and a drain voltage pumping unit for generating a drain voltage according to the program control signals of the detection unit.
Claims9
A drain voltage pumping circuit comprising:
- a detection unit for outputting program control signal by detecting the number of bits for programming before programming memory cells on a memory cell array;
- and
- a drain voltage pumping unit for generating a drain voltage according to said program control signals of said detection unit.
A drain voltage pumping circuit comprising:
- a detection circuit for detecting the number of bits to be programmed of a plurality of bits and for generating a plurality of program control signals according to the number of bits;
- and
- a drain voltage pumping unit having a ring oscillator and a pumping circuit, with the ring oscillator generating pulse signals having cycles which are different from each other in respond to said program control signal and said pumping circuit generating a drain voltage according to a pulse signal from said ring oscillator.
A drain voltage pumping circuit comprising:
- a detection circuit for detecting the number of bits to be programmed of a plurality of bits and for generating a plurality of program control signals according to the number of bits;
- and
- a drain voltage pumping unit having a ring oscillator and a pumping circuit, wherein said ring oscillator generates a pulse signal having a constant period and said pumping circuit have a plurality of pumping circuits which are selectively operated by said program signals and said pulse signal, thereby generating a drain voltage.
Dependencies are inferred from the claim text.