Apparatus having titanium silicide and titanium formed by chemical vapor deposition

A memory, comprising:

• a memory array;
• a control circuit, operatively coupled to the memory array;
• address logic, operatively coupled to the memory array and the control circuit;
• wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising:
• titanium silicide formed on an exposed silicon base layer, wherein the titanium suicide is produced by a method comprising forming titanium silicide in a chemical vapor deposition chamber according to a first chemical process described by TiCl4+SinH2n+2+H2→TiSix+HCl, and a second chemical process described by TiCl4+Si+H2→TiSix+HCl, wherein n is greater than or equal to 1, and x is less than or equal to 2;
• titanium nitride on the titanium silicide;
• and
• a plug material on the titanium nitride.

A memory, comprising:

• a memory array;
• a control circuit, operatively coupled to the memory array;
• and
• address logic, operatively coupled to the memory array and the control circuit;
• wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising:
• titanium silicide, wherein the titanium silicide is formed by a method comprising:
• combining a titanium precursor in the presence of hydrogen in a chemical vapor deposition chamber;
• forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole by reacting the titanium precursor with the silicon base layer;
• and
• operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
• titanium, wherein the titanium is formed by a method comprising:
• combining the titanium precursor in the presence of hydrogen in the chemical vapor deposition chamber;
• forming the titanium on an insulator defining sidewalls of the contact hole by reacting the titanium precursor with the hydrogen;
• and
• operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously;
• titanium nitride on the titanium silicide;
• and
• a plug material on the titanium nitride.

A memory, comprising:

• a memory array;
• a control circuit, operatively coupled to the memory array;
• and
• address logic, operatively coupled to the memory array and the control circuit;
• wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising:
• titanium silicide, wherein the titanium silicide is formed by a method comprising:
• combining TiCl4 in the presence of hydrogen in a chemical vapor deposition chamber;
• forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole using a first chemical process described by TiCl4+Si+H2→TiSix+HCl, wherein x is less than or equal to 2;
• and
• operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
• titanium, wherein the titanium is formed by a method comprising:
• combining the TiCl4 in the presence of hydrogen in the chemical vapor deposition chamber;
• forming the titanium on an insulator defining sidewalls of the contact hole using a second chemical process described by TiCl4+H2→Ti+HCl;
• and
• operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously;
• titanium nitride on the titanium silicide;
• and
• a plug material on the titanium nitride.

A memory, comprising:

• a memory array;
• a control circuit, operatively coupled to the memory array;
• and
• address logic, operatively coupled to the memory array and the control circuit;
• wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising:
• titanium silicide, wherein the titanium silicide is formed by a method comprising:
• combining tetradimethyl amino titanium in the presence of hydrogen in a chemical vapor deposition chamber;
• forming the titanium silicide on an exposed silicon base layer defining a bottom of a contact hole by reacting the tetradimethyl amino titanium with the silicon base layer;
• and
• operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
• titanium, wherein the titanium is formed by a method comprising:
• combining the tetradimethyl amino titanium in the presence of hydrogen in a chemical vapor deposition chamber;
• forming the titanium on an insulator defining sidewalls of the contact hole by reacting the tetradimethyl amino titanium with the hydrogen;
• and
• operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium, wherein forming the titanium and forming the titanium silicide occur substantially simultaneously;
• titanium nitride on the titanium silicide;
• and
• a plug material on the titanium nitride.

A memory, comprising:

• a memory array;
• a control circuit, operatively coupled to the memory array;
• and
• address logic, operatively coupled to the memory array and the control circuit;
• wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising:
• titanium silicide, wherein the titanium silicide is formed by a method comprising:
• combining a titanium precursor and a silicon precursor in the presence of hydrogen in a chemical vapor deposition chamber;
• forming the titanium silicide on a silicon base layer by reacting the titanium precursor with the silicon precursor and by reacting the titanium precursor with the silicon base layer;
• and
• operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
• titanium nitride on the titanium silicide;
• and
• a plug material on the titanium nitride.

A memory, comprising:

• a memory array;
• a control circuit, operatively coupled to the memory array;
• and
• address logic, operatively coupled to the memory array and the control circuit;
• wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising:
• titanium silicide, wherein the titanium silicide is formed by a method comprising:
• combining TiCl4 and SinH2n+2 in the presence of hydrogen in a chemical vapor deposition chamber, wherein n is greater than 1;
• forming the titanium silicide on a silicon base layer using a first chemical process described by TiCl4+SinH2n+2→TiSix+HCl and using a second chemical process described by TiCl4+Si+H2→TiSix+HCl, wherein x is less than or equal to 2;
• and
• operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
• titanium nitride on the titanium silicide;
• and
• a plug material on the titanium nitride.

A memory, comprising:

• a memory array;
• a control circuit, operatively coupled to the memory array;
• and
• address logic, operatively coupled to the memory array and the control circuit;
• wherein at least one of the memory array, the control circuit, and the address logic includes a contact comprising:
• titanium silicide, wherein the titanium silicide is formed by a method comprising:
• combining Ti(N(CH3)2)4 and SinH2n+2 in the presence of hydrogen in a chemical vapor deposition chamber, wherein n is greater than 1;
• forming the titanium silicide on a silicon base layer by reacting the Ti(N(CH3)2)4 with the SinH2n+2 and by reacting the Ti(N(CH3)2)4 with the silicon base layer;
• and
• operating the chemical vapor deposition chamber at a pressure of approximately between 0.1 and 100 Torr during forming the titanium silicide;
• titanium nitride on the titanium silicide;
• and
• a plug material on the titanium nitride.