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US 6,208,003 B1Granted
Semiconductor structure provided with a polycide interconnection layer having a silicide film formed on a polycrystal silicon film
AssigneeNippon Steel Corporation
InventorHirotomo Miura
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Abstract
A semiconductor device has a semiconductor substrate and a conductive layer formed above the semiconductor substrate. The conductive layer has a silicon film, a silicide film formed on the silicon film, and a high melting-point metal film formed on the silicide film. The silicon film has a non-doped layer, which does not contain impurities, and an impurity layer which is formed on the non-doped layer and contains impurities. The silicide film is formed on the impurity layer of the silicon film.
Claims10
A semiconductor device comprising:
- a semiconductor substrate;
- and
- a conductive layer formed above said semiconductor substrate,
- wherein said conductive layer includes:
- a silicon film including a non-doped layer, which does not contain impurities, and an impurity layer which is formed on said non-doped layer and contains an ion implanted impurity selected from the group consisting of arsenic and phosphorous;
- a silicide film formed on said impurity layer of said silicon film, wherein said impurity layer operates to prevent said silicide film from extending into or past said impurity layer and said non-doped layer;
- and
- a high melting point metal film formed on said silicide film.
5 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- an insulating layer formed on said semiconductor substrate;
- and
- a conductive layer formed on said insulating layer,
- wherein said conductive layer includes:
- a silicon film including a non-doped layer, which does not contain impurities, and an impurity layer which is formed on said non-doped layer and contains impurities;
- a silicide film formed on said impurity layer of said silicon film;
- said impurity layer having a substantially slower reaction rate than said non-doped layer for forming said silicide film;
- and
- a high melting point metal film formed on said silicide film.
7 more elements
Dependencies are inferred from the claim text.