Gallium arsenide semiconductor devices fabricated with insulator layer

A gallium arsenide metal insulator semiconductor field effect transistor comprising a single crystal gallium arsenide semiconductor substrate having a substrate surface, a source, a drain, a channel connecting the source to the drain, and an insulator layer which is deposited onto the channel and which separates the channel from a metal gate electrode which controls the current in channel, wherein the insulator layer includes a homogenous film comprising a monolayer of barium atoms attached directly onto said gallium arsenide substrate surface, and a single crystal epitaxial film of barium fluoride on said monolayer, where the substrate and single crystal epitaxial film have the same crystal orientation, and

• wherein the homogenous film is formed as the reaction product of a reaction between barium fluoride vapor and the gallium arsenide substrate surface in the presence of arsenic gas at said gallium arsenide substrate surface such that the homogenous film is substantially free of barium atoms unreacted with the gallium arsenide substrate surface when the reaction is completed and a two-dimensional growth of the epitaxial film of barium fluoride onto said monolayer has commenced.

A gallium arsenide charge coupled device comprising a doped single crystal gallium arsenide semiconductor substrate having a substrate surface, and an array of metal gate electrodes separated from the substrate surface by an insulator layer, wherein the insulator layer includes a homogenous film comprising a monolayer of barium atoms attached directly onto said gallium arsenide substrate surface, and a single crystal epitaxial film of barium fluoride on said monolayer, where the substrate and single crystal epitaxial film have the same crystal orientation, and

• wherein the homogenous film is formed as the reaction product of a reaction between barium fluoride vapor and the gallium arsenide substrate surface in the presence of arsenic gas at said gallium arsenide substrate surface such that the homogenous film is substantially free of barium atoms unreacted with the gallium arsenide substrate surface when the reaction is completed and a two-dimensional growth of the epitaxial film of barium fluoride onto said monolayer has commenced.

A gallium arsenide capacitor device comprising a doped single crystal gallium arsenide semiconductor substrate having a substrate surface, and a first metal electrode in contact with the gallium arsenide substrate surface and a second metal electrode separated from the substrate surface by an insulator layer, wherein the insulator layer includes a homogenous film comprising a monolayer of barium atoms attached directly onto said gallium arsenide substrate surface, and a single crystal epitaxial film of barium fluoride on said monolayer, where the substrate and single crystal epitaxial film have the same crystal orientation, and

• wherein the homogenous film is formed as the reaction product of a reaction between barium fluoride vapor and the gallium arsenide substrate surface in the presence of arsenic gas at said gallium arsenide substrate surface such that the homogenous film is substantially free of barium atoms unreacted with the gallium arsenide substrate surface when the reaction is completed and a two-dimensional growth of the epitaxial film of barium fluoride onto said monolayer has commenced.