Thin film transistor for antistatic circuit and method for fabricating the same

A thin film transistor for an antistatic circuit comprising:

• wells formed on a silicon substrate;
• insulating regions for electrical isolation between electrodes formed within said wells;
• active regions formed on an area between said insulating regions;
• gate electrodes formed on said insulating regions;
• oxide films for gate sidewall spacers respectively formed on said insulating regions and sidewalls of said gate electrodes;
• and
• a first high-density impurity diffused region formed within a free low-density impurity diffused region and a second high-density impurity diffused region formed within a second low-density impurity diffused region wherein an outside edge of at least one of said first and second high-density impurity diffused regions is 0.1 μm within said active region.

A transistor for an antistatic circuit comprising:

• a well formed on a silicon substrate;
• first, second, and third insulating regions for electrical isolation between electrodes formed within said well;
• an area between said first and second insulating regions forming an active region;
• first and second low density impurity diffused regions respectively interposed between said first and second insulating regions and said second and third insulating regions;
• a first high-density impurity diffused region formed within said first low-density impurity diffused region, wherein said active region extends at least 0.1 μm beyond said first high-density impurity diffused region;
• and
• a second high-density impurity diffused region formed within said second low-density impurity diffused region.

A transistor for an antistatic circuit comprising:

• a well formed on a silicon substrate;
• insulating regions within said well;
• a first active region bounded by said insulating regions;
• a first low-density impurity diffused region in said first active region;
• and
• a first high-density impurity diffused region in said first low-density impurity diffused region, wherein said first action region extends at least 0.1 μm beyond said first high-density impurity diffusion region.

A transistor for an antistatic circuit comprising:

• a well formed on a silicon substrate;
• insulating regions within said well;
• an active region bounded by said insulating regions;
• a gate electrode overlying said active region;
• a low-density impurity diffused region in said low-density impurity diffused region, wherein said active region extends beyond said high-density impurity diffused region on one side of the gate electrode and does not extend beyond said high-density impurity diffused region on the other side of the gate electrode.

A transistor for an antistatic circuit comprising:

• a well formed on a silicon substrate;
• insulating regions within said well;
• an active region bounded by said insulating regions;
• a gate electrode overlying said active region;
• a low-density impurity diffused region in said low-density impurity diffused region, wherein said active region extends beyond said high-density impurity diffused region on one side of the gate electrode and does not extend beyond said high-density impurity diffused region on the other side of the gate electrode.