Semiconductor device and method for fabricating the same

A semiconductor device comprising:

• a base substrate;
• a wiring formed on the base substrate;
• a first insulating film covering an upper surface and a side surface of the wiring;
• an etching stopper film formed on the surface of the base substrate extending over the surface of the first insulating film;
• a conductor plug connected to the base substrate through the etching stopper film and projected upward of the base substrate;
• a cylindrical storage electrode formed on the etching stopper film and an upper surface and a side surface of the conductor plug, and electrically connected to the conductor plug;
• a dielectric film formed on the storage electrode, which is opposed at least at the side surface of the conductor plug and at a inner surface of a cylinder;
• and
• an opposed electrode formed on the dielectric film.

A semiconductor device comprising:

• a base substrate;
• a plurality of bit lines formed on the base substrate;
• a first insulating film covering an upper surface and a side surface of the plurality of bit lines;
• a conductor plug connected to the base substrate between the plurality of bit lines, the conductor plug being projected higher than the plurality of bit lines;
• and
• a capacitor having one electrode connected to an upper surface and a side surface of the conductor plug.