Semiconductor device having smooth surface for suppressing layer displacement
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorIsao Tottori
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Abstract
On a silicon oxide film covering a gate electrode portion, a reflowed and polished BPSG film is formed. A second interconnection layer is formed on the BPSG film. To cover the second interconnection layer, a silicon oxide film having a thickness of at least the substantial thickness of the second interconnection layer is formed on a silicon oxide film. Thus, the planarity of the base of the interconnection layer is ensured and displacement of the interconnection layer is suppressed. Accordingly, a semiconductor device having a high degree of integration is obtained.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate having a main surface;
- a first interconnection layer formed on said semiconductor substrate;
- a first interlayer insulating film formed on said semiconductor substrate to cover said first interconnection layer, said first interlayer being polished by chemical-mechanical polishing;
- a second interconnection layer formed on said first interlayer insulating film;
- and
- a second interlayer insulating film formed on said first interlayer insulating film to cover said second interconnection layer;
- said first interlayer insulating film has one of a polished top surface and a film having a polished top surface which is laminated on said first interlayer insulating film, the polished top surface defining means for preventing displacement of said second interconnection layer when said first interlayer insulating film is transformed by heat.
A semiconductor device, comprising:
- a semiconductor substrate having a main surface;
- a first interconnection layer formed on said semiconductor substrate;
- a first interlayer insulating film formed on said semiconductor substrate to cover said first interconnection layer;
- a second interconnection layer formed on said first interlayer insulating film;
- and
- a second interlayer insulating film formed on said first interlayer insulating film to cover said second interconnection layer;
- said first interlayer insulating film including an impurity-doped insulating film that contains prescribed impurities and is reflowed, and
- said second interlayer insulating film having an interconnection coating insulating film that has a thickness allowing fixing and holding of said second interconnection layer and covers said second interconnection layer.
Dependencies are inferred from the claim text.