Back to results
US 6,207,984 B1Granted
CMOS sensor
AssigneeUnited Microelectronics Corp.
InventorKuang-Yeh Chang
Life of this patent
Estimating the term…
Abstract
The present invention is directed to a CMOS sensor. A substrate has a metal-oxide semiconductor. The metal-oxide semiconductor has a gate and a source/drain region in the substrate. A dummy shield layer is over a part of the substrate. A sensor region is in the substrate with one end extended from a part of the source/drain region and the other end adjacent to the part of the substrate under the dummy shield layer.
Claims5
A structure of a CMOS sensor, comprising:
- a substrate, having a metal oxide semiconductor, wherein the metal oxide semiconductor has a source/drain region in the substrate and a gate on the substrate;
- a dummy shield layer, on a part of the substrate which does not comprise an isolation region;
- and
- a sensor region, in the substrate with one end extended from a part of the source/drain region and the other end adjacent to the part of the substrate under the dummy shield.
1 more element
Dependencies are inferred from the claim text.