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US 6,207,981 B1Granted
Charge-coupled device with potential barrier and charge storage regions
AssigneeNEC Corporation
InventorsKeisuke Hatano, Yasutaka Nakashiba
Life of this patent
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Abstract
A two-phase, single-ply-electrode type charge-coupled device is provided that has a pair of a potential barrier region and a charge storage region underlying one charge transfer electrode. The charge storage region is formed in such a manner that the potential of the charge storage region becomes gradually deep in charge transfer direction. This structure enables smooth charge transfer.
Claims10
A charge-coupled device comprising:
- a first conductivity-type semiconductor layer;
- a charge transfer electrode formed over said first conductivity-type semiconductor layer;
- and
- a potential barrier region and a charge storage region formed in said first conductivity-type region underneath said charge transfer electrode, wherein said potential barrier region is formed by implanting impurities of a conductivity type opposite to that of said first conductivity-type semiconductor layer, and
- wherein
- said charge storage region is formed in such a manner that the cross area of said charge storage region at a point a distance x in a charge transfer direction from the boundary between said potential barrier region and said charge storage region is a monotone increasing function when said charge storage region is cut perpendicularly to the charge transfer direction, and the boundary surface between said potential barrier region and said charge storage region has a W-shaped surface.
3 more elements
A charge-coupled device comprising:
- a first conductivity-type semiconductor layer;
- a charge transfer electrode formed over said first conductivity-type semiconductor layer;
- and
- a potential barrier region and a charge storage region formed in said first conductivity-type semiconductor layer underneath said charge transfer electrode, wherein
- said potential barrier region is formed by implanting impurities of a conductivity type opposite to that of said first conductivity-type semiconductor layer,
- said charge storage region is formed in such a manner
- (a) the boundary surface between said potential barrier region and said charge storage region has a W-shaped sloped surface, instead of a vertical surface, in the charge transfer direction;
- and
- (b) that the potential P(x) in said charge storage region at a point a distance x in a charge transfer direction from the boundary between said potential barrier region and said charge storage region is a monotone decreasing function when a voltage is applied to said charge transfer electrode.
6 more elements
Dependencies are inferred from the claim text.