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US 6,207,978 B1Granted
Flash memory cells having a modulation doped heterojunction structure
AssigneeAdvanced Micro Devices, Inc.
InventorRichard Fastow
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Abstract
A flash memory device and a method to manufacture the flash memory device. The flash memory device includes a modulation-doped heterostructure formed in a semiconductor substrate, a layer of tunnel oxide, a floating gate, a layer of dielectric, a control gate and source and drain regions formed in the substrate.
Claims12
A flash memory device comprising:
- a modulation-doped heterostructure in a semiconductor substrate, wherein the modulation-doped heterostructure comprises a layer of silicon that acts as a quantum well that becomes an electron channel under positive bias;
- a layer of tunnel oxide on a surface of the semiconductor substrate over the heterostructure;
- a floating gate on the layer of tunnel oxide;
- a layer of dielectric on the floating gate;
- a control gate on the layer of dielectric;
- and
- a source region and a drain region in the semiconductor substrate.
4 more elements
Dependencies are inferred from the claim text.