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US 6,207,976 B1Granted
Semiconductor device with ohmic contacts on compound semiconductor and manufacture thereof
AssigneeFujitsu Limited
InventorsTsuyoshi Takahashi, Naoya Okamoto, Naoki Hara
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Abstract
A first surface layer made of compound semiconductor material is defined in a surface area of a substrate. A first intermediate layer is formed on the surface layer, the first intermediate layer being made of compound material having Ga as a III group element and S as a VI element and having a thickness of at least two monolayers or thicker. A first electrode is formed on the first intermediate layer, being electrically connected to the first surface layer with an ohmic contact.
Claims22
A semiconductor device comprising:
- a substrate having a first surface layer in a surface area, the first surface layer being made of a compound semiconductor material;
- a first intermediate layer formed on the first surface layer, made of a compound material containing Ga as a group III element and S as a group VI element, and having a thickness of at least two monolayers or thicker;
- and
- a first electrode formed on the first intermediate layer, the first electrode being electrically connected to the first surface layer with an ohmic contact.
1 more element
A semiconductor device comprising:
- a substrate having a principal surface;
- a collector layer formed on the principal surface of the substrate and made of a compound semiconductor material of a first conductivity type;
- a base layer formed on a partial surface area of the collector layer and made of a compound semiconductor material of a second conductivity type opposite to the first conductivity type;
- an emitter layer formed on a partial surface area of the base layer and made of a compound semiconductor material of the first conductivity type;
- a collector electrode formed on a surface of the collector layer where the base layer is not formed, the collector electrode being electrically connected to the collector layer with an ohmic contact;
- a base electrode formed on a surface of the base layer where the emitter layer is not formed, the base electrode being electrically connected to the base layer with an ohmic contact;
- an emitter electrode formed on a surface of the emitter layer and electrically connected to the emitter layer with an ohmic contact;
- and
- an intermediate layer disposed at least one area between the collector electrode and the collector layer, between the base electrode and the base layer, or between the emitter electrode and the emitter layer, the intermediate layer being made of a compound material containing Ga as a III group III element and S as a VI group VI element and having a thickness of at least two monolayers or thicker.
6 more elements
A semiconductor device comprising:
- a substrate having a surface layer made of a compound semiconductor material;
- a source electrode and a drain electrode directly formed on the surface layer of the substrate and spaced apart by a certain distance in an in-plane of the surface layer;
- a gate electrode formed on a surface area of the surface layer between the source electrode and the drain electrode and spaced apart from the source electrode and the drain electrode by a certain distance;
- and
- a GaS compound layer covering surface areas of the surface layer of the substrate between the gate electrode and the drain electrode and between the source electrode and the drain electrode and having a thickness of at least two monolayers or thicker.
2 more elements
A semiconductor device comprising:
- a III-V group III-V compound semiconductor layer:
- an ohmic contact layer formed on the III-V group compound semiconductor layer, the ohmic contact layer containing at least Ti, and S, Se or Te;
- and
- a metal layer formed on the ohmic contact layer.
1 more element
A semiconductor device comprising:
- a channel layer formed on a semiconductor substrate;
- an electron supply layer formed on the channel layer;
- a contact layer formed on the electron supply layer and made of a III-V group III-V compound semiconductor material;
- an ohmic contact layer formed on the contact layer, the ohmic contacts layer containing at least Ti, and S, Se or Te;
- a source electrode and a drain electrode formed on the ohmic contact layer;
- and
- a gate electrode formed on the electron supply layer between the source electrode and the drain electrode.
4 more elements
Dependencies are inferred from the claim text.