Angle cavity resonant photodetector

An angle cavity resonant photodetector assembly comprising:

• a semiconductor supporting structure including a substrate;
• a waveguide positioned on said semiconductor supporting structure and having a waveguide active layer located between a pair of waveguide cladding layers, said waveguide having a first end for receiving light and a second end for transmitting said light, said light propagating down the waveguide active layer from the first end to the second end;
• and
• a photodetector positioned adjacent to said second end of said waveguide and having a combination of generally planar semiconductor layers which form an angle with respect to the length of the waveguide active layer and the propagation direction of the light, said photodetector including at least one semiconductor active layer where light is converted into an electrical output, said photodetector further including a first reflector corresponding to one outer layer of said photodetector and a second reflector corresponding to an opposite outer layer of said photodetector, said photodetector receiving the light from the waveguide through the first reflector.

An angle cavity resonant photodetector assembly comprising:

• a semiconductor supporting structure including a substrate;
• a waveguide positioned on said semiconductor supporting structure and having a waveguide active layer located between a pair of waveguide cladding layers, said waveguide having a first end for receiving light and a second end for transmitting said light, said light propagating down the waveguide active layer from the first end to the second end;
• and
• a photodetector separated from said second end of said waveguide by a cavity and having a combination of generally planar semiconductor layers which form an angle relative to the length of the waveguide active layer and the propagation direction of the light, said combination of planar layers including at least one semiconductor active layer where light is converted into an electrical output, said combination of generally planar layers further including a first reflector layer corresponding to one outer layer of said photodetector and a second reflector layer corresponding to an opposite outer layer of said photodetector, wherein the second end of the waveguide is positioned at one side of the cavity and the photodetector is positioned at an opposite side of the cavity, said light travelling across the cavity from the waveguide to the photodetector, and wherein said first reflector and said second reflector are highly reflective semiconductor layers for providing a reflective surface for said light travelling within said photodetector, said first reflector receiving light from the second end of said waveguide.