Light emitting diode with transparent window layer
AssigneeSuper Epitaxial Products, Inc.
InventorsJyh-Chia Chen, Zhenchun Huang, Li-Hsin Kuo
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Abstract
The light brightness of a semiconductor LED is increased by employing a light transmitting window comprising ZnO. In another embodiment, current crowding is reduced, efficiency increased and reliability (lifetime) increased by forming a thin semiconductor transition layer to reduce contact resistance between an overlying transparent window layer and an underlying transparent current diffusion layer formed on a double heterostructure light generation region. Optimum performance is achieved employing the transition layer with a ZnO transparent window layer.
Claims15
A semiconductor light emitting diode (LED) comprising:
- a semiconductor substrate having a back electrical contact;
- a light generation region on the substrate;
- a transparent current diffusion layer on the light generation region;
- a dual layer window on the current diffusion layer;
- and
- a front contact on the dual layer window, wherein the dual layer window comprises:
- a thin transition layer on the current diffusion layer;
- and
- a transparent window layer, comprising zinc oxide, on the transition layer, the transition layer reducing contact resistance between the current diffusion layer and the window layer.
Dependencies are inferred from the claim text.