Thin film transistor suitable for use in an active matrix type display and method of fabricating the same
AssigneesSanyo Electric Co., Ltd., Sony Corporation
InventorsYushi Jinno, Ken Wakita, Masahiro Minegishi
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Abstract
A thin film transistor which can be used in an LCD display panel includes an insulator substrate, a gate electrode located on the insulator substrate, an insulator film provided on the insulator substrate and the gate electrode, and a polycrystalline silicon film located on the insulator film. A channel is defined in a first portion of the polycrystalline silicon film over the gate electrode, and a drain and a source are defined in second and third portions of the polycrystalline silicon film over the insulator substrate. Grain sizes of the drain and source are equal to or greater than a grain size of the channel.
Claims5
An active matrix type display apparatus comprising:
- a plurality of pixels;
- and
- a plurality of drive elements for respectively driving the plurality of pixels, each drive element including a thin film transistor of a bottom gate structure, the thin film transistor having:
- an insulator substrate;
- a gate electrode located on the insulator substrate;
- an insulator film provided on the insulator substrate and the gate electrode;
- and
- a polycrystalline silicon film located on the insulator film, a channel defined in a first portion of the polycrystalline silicon film over the gate electrode, a drain and a source defined in second and third portions of the polycrystalline silicon film over the insulator substrate, grain sizes of all of the drain and all of the source being greater than a grain size of the channel by laser annealing.
Dependencies are inferred from the claim text.