Charged-particle-beam microlithography apparatus and methods exhibiting reduced thermal deformation of mark-defining member

Abstract

Methods and apparatus are disclosed for reducing thermal deformation of “upstream” marks (as used for alignment and/or calibration) situated on a reticle or on a reticle plane (e.g., on the reticle stage), thereby facilitating more accurate transfer of the reticle pattern to a sensitized substrate (e.g., semiconductor wafer) using a charged particle beam (e.g., electron beam). The charged particle beam illuminates an upstream mark situated on the reticle or on a reticle plane and projects an image of the illuminated upstream mark onto a corresponding “downstream” mark situated on a substrate plane. A shield is situated upstream of the upstream mark and serves to block downstream passage of the charged particle beam except to illuminate the upstream mark or a portion of the upstream mark. The upstream mark can be situated on the reticle or on a mark member situated in the reticle plane.

Dependencies are inferred from the claim text.