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US 6,207,944 B1Granted
Semiconductor imaging device
AssigneeSimage Oy
InventorsKonstantinos Evangelos Spartiotis, Jouni Ilari Pyyhtiã, Tielang Cao
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AssigneeSimage Oy
InventorsKonstantinos Evangelos Spartiotis, Jouni Ilari Pyyhtiã, Tielang Cao
Estimating the term…
A semi-conductor imaging device, for example for x-ray imaging, uses a detector substrate exposable to incident radiation and having a plurality of charge collection contacts for collecting charge therefrom, the detector substrate being arranged in front of a readout substrate carrying or comprising readout circuitry, the readout substrate using a first region with a respective cell circuit coupled to each charge collection contact for receiving signals from the detector substrate, and a second region with further circuitry, and such that the charge collection contacts are arranged over both the first and second regions of the readout substrate. A conductive path connects each charge collection contact over the second region with a respective terminal for contacting an input of a cell circuit in the first region. The invention enables the part of the detector substrate overlying the additional circuitry to be used as active detection area.
A semiconductor imaging device comprising a detector substrate exposable to incident radiation and having a plurality of charge collection contacts for collecting charge therefrom, the detector substrate being arranged in front of a readout substrate, each contact being coupled to an input of a respective circuit of an array of readout cell circuits of the readout substrate, the readout substrate associated with further circuitry connected to said cell circuits, said further circuitry disposed in a region of said readout substrate distinct from said array of cell circuits, wherein at least one first charge collection contact from the plurality of charge collection contacts is positioned out of registration with the region of the readout substrate with the cell circuit for the at least one charge collection contact and overlapping said distinct region of the readout substrate.
A semiconductor imaging device comprising a detector substrate exposable to incident radiation and having a plurality of charge collection contacts for collecting charge therefrom, the detector substrate being arranged in front of a readout substrate, each contact being coupled to an input of a respective circuit of an array of read out cell circuits of the readout substrate, the readout substrate associated with further circuitry connected to said cell circuits, said further circuitry disposed in a region of said readout substrate distinct from said array of cell circuits, wherein at least one first charge collection contact from the plurality of charge collection contacts is positioned out of registration with the input of the cell circuit for the contact and overlapping said distinct region of the readout substrate.
A semiconductor imaging device comprising a detector substrate exposable to incident radiation and having a plurality of charge collection contacts or collecting charge therefrom, the detector substrate being arranged in front of a readout substrate associated with further circuitry comprising readout circuitry, wherein the readout substrate comprises a first region with a respective cell circuit coupled to each charge collection contact, and capable of receiving signals from the detector substrate, and a second region with further circuitry associated with and connected to a plurality of cell circuits, and wherein the charge collection contacts are arranged over the first and second regions of the readout substrate.
A semiconductor imaging device comprising a detector substrate exposable to incident radiation and having a plurality of charge collection contacts for collecting charge therefrom, the detector substrate being arranged in front of a readout substrate associated with further circuitry comprising a readout cell circuit coupled to each charge collection contact for accumulating the charge received from the charge collection contact, at least a first charge collection contact being arranged out of registration with its associated cell circuit and at least a second charge collection contact being arranged in register with its associated cell circuit, wherein the cell circuit from the first charge collection contact has a different charge accumulation capacitance from the cell circuit for the second charge collection contact.
Dependencies are inferred from the claim text.