Via transitions for use as micromachined circuit interconnects
AssigneeRaytheon Company
InventorsCheng P. Wen, Linda P. B. Katehi, Stephen Robertson, Thomas Ellis, Katherine Herrick, Gabriel M. Rebeiz
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Abstract
Structures and methods that provide for via transitions between opposite sides of a high resistivity silicon micro-machined membrane substrate. The via transitions provide ground-signal-ground interconnection between coplanar waveguides disposed on opposite sides of substrate. Adjacent via transitions are anisotropically etched from opposite surfaces of the substrate to form the via transitions. The ground-signal-ground configuration provides RF impedance matching at the via transition.
Claims4
A via transition for use as a micromachined circuit interconnect, said transition comprising:
- a silicon micromachined substrate having opposite sides;
- a plurality of anisotropically etched via holes disposed through the substrate, wherein alternate via holes are etched from the opposite sides of the substrate;
- and
- conductive metallization disposed in the vias.
A method of fabricating a via transition for use as a micromachined circuit interconnect, said method comprising the steps of:
- providing a silicon micromachined substrate having opposite sides;
- anisotropically etching a plurality of via holes through the substrate, wherein alternate via holes are etched from the opposite sides of the substrate;
- and
- disposing conductive metallization in the vias.
Dependencies are inferred from the claim text.