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AssigneeSanyo Electric Co., Ltd.
InventorsTakuo Nakai, Hiroyuki Taniguchi, Teruhiko Ienaga, Yasuo Kadonaga
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A photovoltaic element which directly converts an optical energy such as solar light into an electric energy. After many uneven sections are formed on the surface of an n-type crystalline silicon substrate (1), the surface of the substrate (1) is isotropically etched. Then the bottoms (b) of the recessed sections are rounded and a p-type amorphous silicon layer (3) is formed on the surface of the substrate (1) through an intrinsic amorphous silicon layer (2). The shape of the surface of the substrate (1) after isotropic etching is such that the bottoms of the recessed sections are slightly rounded and therefore the amorphous silicon layer can be deposited in a uniform thickness.
A photovoltaic element in which an upper crystalline silicon substrate having many uneven sections of pyramid shape formed on the front surface of the substrate by anisotropic etching and an amorphous or micro crystalline silicon layer formed on the uneven sections by a CVD method are deposited, wherein
A photovoltaic element in which an upper crystalline silicon substrate of one conductivity type having many uneven sections of pyramid shape formed on the front surface of the substrate by anisotropic etching and an amorphous or micro crystalline silicon layer of different conductivity type formed on the front surface of the substrate by a CVD method are deposited, wherein
A photovoltaic element in which an upper crystalline silicon substrate of one conductivity type having many uneven sections of pyramid shape on both front and back surfaces of the substrate by anisotropic etching and an amorphous or micro crystalline silicon layer of different conductivity type formed on both front and back surfaces of the substrate by a CVD method are deposited, wherein
A method for manufacturing a photovoltaic element, wherein
A method for manufacturing a photovoltaic element including:
Dependencies are inferred from the claim text.