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US 6,207,844 B1Granted
Compounds and methods for depositing pure thin films of gallium nitride semiconductor
AssigneeArizona Board of Regents
InventorsJohn Kouvetakis, Jeff McMurran
Life of this patent
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Abstract
The invention is directed to novel compounds which serve as single-source precursors for the deposition of gallium nitride on thin films. The invention is also directed to methods for the synthesis of these novel compounds. The invention is further directed to methods for the use of such compounds in the deposition of gallium nitride on thin films and in the synthesis of bulk materials.
Claims5
A compound having the following general formula
- (X1X2GaN3)n
- where X1 and X2 are the same or different and are selected from the group consisting of H and isotopes thereof, Cl, Br, F, I and CH3 wherein when X1 is CH3X2 is H and wherein when X1 is Cl X2is H and n=1, 2, 3 or 4.
Dependencies are inferred from the claim text.