US 6,207,591 B1 · Method and equipment for manufacturing semiconductor device

Abstract

A silicon wafer is heated from an initial pre-heating temperature (T0) up to a first annealing temperature (T1) by a rapid heating up step using an IR lamp. A first annealing is executed at the first annealing temperature (T1). Successively, while the silicon wafer is maintained at a second annealing temperature (T2) lower than the first annealing temperature (T1), a second annealing step is executed by a resistive heating furnace. A thermal oxidation can be executed as the second annealing step. To do so, an equipment for manufacturing a semiconductor device in the present invention is provided with: a heating device having an IR lamp and a resistive heater; an annealing tube having on a surface thereof a plurality of concave portions in such a way that each bottom approaches a central line; a resistive heater wrapped around this annealing tube; and an IR lamp movably inserted into and pulled out from the concave portion from the external. A IR lamp moving unit for moving the IR lamp is connected to the IR lamp. A wafer loader for mounting a plurality of wafers can be carried into and from the annealing tube. The first annealing step using the IR lamp at the rapid heating rate and successively the second annealing step using the resistive heater are performed on the plurality of wafers without performing a cooling step down to the room temperature. Accordingly, it is possible to effectively recover the damage induced by ion implantation and the like and also possible to suppress the enhanced diffusion of impurity resulting from the,damage to thereby improve the controllability of impurity distribution profile.

Claims26

Dependent claims

A method for manufacturing a semiconductor device employing an equipment having an annealing tube, a resistive heater positioned adjacently to the annealing tube and IR (infrared) lamps positioned adjacently to the annealing tube and the resistive heater, the method comprising the steps of:

(a) heating a semiconductor substrate disposed in the annealing tube from an initial temperature up to a first annealing temperature at a first heating rate by increasing an input power for the IR lamps, while keeping an input power for the resistive heater in a low level such that a thermal energy emitted by the resistive heater is lower than that from the IR lamps so as not to contribute to the first annealing temperature, and then maintaining the first annealing temperature for a predetermined period, and thereby performing a first annealing on said semiconductor substrate;
(b) decreasing temperature of said semiconductor substrate from said first annealing temperature to a second annealing temperature, which is higher than said initial temperature and lower than said first annealing temperature, at a first cooling rate by decreasing the input power for the IR lamps, while increasing the input power for the resistive heater so as to attain the second annealing temperature;
(c) maintaining said second annealing temperature for a predetermined period and thereby performing a second annealing on said semiconductor substrate by controlling the input power for the resistive heater;
and
(d) cooling said semiconductor substrate at a second cooling rate by decreasing the input power for the resistive heater.

2 more elements

A method for manufacturing a semiconductor device employing an equipment having an annealing tube, a resistive heater positioned adjacently to the annealing tube and IR lamps positioned adjacently to the annealing tube and the resistive heater, the method comprising the steps of:

(a) heating a semiconductor substrate disposed in the annealing tube from an initial temperature up to a first annealing temperature at a first heating rate by increasing an input power for the IR lamps, while keeping an input power for the resistive heater in a low level such that a thermal energy emitted by the resistive heater is lower than that from the IR lamps so as not to contribute to the first annealing temperature, and then maintaining the first annealing temperature for a predetermined period, and thereby performing a first annealing on said semiconductor substrate;
(b) decreasing temperature of said semiconductor substrate from said first annealing temperature to a second annealing temperature, which is higher than said initial temperature and lower than said first annealing temperature, at a first cooling rate by decreasing the input power for the IR lamps, while increasing the input power for the resistive heater so as to attain the second annealing temperature.
(c) maintaining said second annealing temperature for a predetermined period and thereby performing a second annealing on said semiconductor substrate by controlling the input power for the resistive heater;
and
(d) heating said semiconductor substrate up to a third annealing temperature higher than said second annealing temperature at a second heating rate by increasing the input power for the IR lamps, while keeping the input power for the resistive heater in the low level, and then maintaining this temperature for a predetermined period, and thereby performing a third annealing on said semiconductor substrate;
and
(e) cooling said semiconductor substrate at a second cooling rate down to said initial temperature by decreasing the input power for the IR lamps.

4 more elements

Dependencies are inferred from the claim text.

Method and equipment for manufacturing semiconductor device

Life of this patent

Method and equipment for manufacturing semiconductor device

Life of this patent

Abstract

Claims26