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US 6,207,590 B1Granted
Method for deposition of high stress silicon dioxide using silane based dual frequency PECVD process
AssigneeWafertech, LLC
InventorJesse Chien-Hua Shan
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Abstract
A method of forming a silicon dioxide layer in a process chamber is disclosed. The process comprises: flowing silane into the process chamber; flowing N2O into the process chamber; generating a RF signal at a first predetermined power at a first frequency; and generating a RF signal at a second predetermined power at a second frequency.
Claims2
A method of forming a silicon dioxide layer in a process chamber using a silane based plasma enhanced chemical vapor deposition process comprising:
- flowing silane into said process chamber at a rate between 200-230 sccm;
- flowing N2O into said process chamber at a rate between 1800-2100 sccm;
- generating a RF signal of about 435 watts at a first frequency of about 13.56 MHz;
- and
- generating a RF signal of about 250 watts at a second frequency of about 350 MHz.
2 more elements
A method of forming a silicon dioxide layer in a process chamber using a silane based plasma enhanced chemical vapor deposition process comprising:
- setting said process chamber to about 2.5 torr and about 400° C.;
- flowing silane into said process chamber at a rate between 200-230 sccm;
- flowing N2O into said process chamber at a rate between 1800-2100 sccm;
- generating a RF signal of about 435 watts at a first frequency of about 13.56 MHz;
- and
- generating a RF signal of about 250 watts at a second frequency of about 350 MHz.
3 more elements
Dependencies are inferred from the claim text.