Method of forming stacked insulating film and semiconductor device using the same
AssigneeSony Corporation
InventorsToshiaki Hasegawa, Junichi Aoyama
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Abstract
Disclosed is a method of forming a cap insulating film at a high reliability prior to heat-treatment for removing an —OH group from a planarization insulating film (APL film) which is excellent in a gap fill ability and global planarization ability and which is formed by a liquid phase CVD process. The (lower) cap insulating film is formed by plasma CVD using a source gas containing an inorganic silane compound gas, O2 and a hydrocarbon; or an organic silane compound gas and O2. With this method, the cap insulating film can be formed without occurrence of harmful ammonia and particles in plasma.
Claims7
A method of forming a stacked insulating film, comprising the sequential steps of:
- forming a planarization insulating film containing an —OH group on a substrate to be processed by a chemical vapor deposition process using a source gas containing either an inorganic silane compound gas or an organic silane compound gas and an oxidizer having an —OH group:
- forming a cap insulating film on said planarization insulating film using a source gas containing an inorganic silane compound gas, an oxidizer, and a hydrocarbon;
- and
- removing the —OH group contained in said planarization insulating film by heat-treatment,
- wherein said source gas used at said step of forming said planarization insulating film containing an —OH group further contains a fluorocarbon based compound.
A method of forming a stacked insulating film, comprising the sequential steps of:
- forming a planarization insulating film containing an —OH group on a substrate to be processed by a chemical vapor deposition process using a source gas containing either an inorganic silane compound gas or an organic silane compound gas and an oxidizer having an —OH group:
- forming a cap insulating film on said planarization insulating film using a source gas containing an inorganic silane compound gas, an oxidizer, and a hydrocarbon;
- and
- removing the —OH group contained in said planarization insulating film by heat-treatment, wherein said source gas used at said step of forming said planarization insulating film containing an —OH group further contains a fluorocarbon based compound.
Dependencies are inferred from the claim text.