Photoresist ashing process for organic and inorganic polymer dielectric materials

A process for removing photoresist present on a dielectric layer on a substrate and on the inside walls of microvias or trenches formed in the dielectric layer, the process comprising a first photoresist removal process comprising:

• introducing a substrate having a dielectric layer thereon, and a photoresist layer on the dielectric layer and on the inside walls of microvias or trenches formed in the dielectric layer into a plasma generator,
• generating a plasma in the plasma generator from a gas comprising one or more fluorine compound containing etchant gases, and
• isotropically etching said photoresist layer with the plasma at a temperature of from about 0° C. to about 90° C. and at a pressure of from about 10 torr or less, for a time period to remove a portion of the photoresist present on the dielectric layer;
• and
• a second photoresist removal process different from the first photoresist removal process.