Ionized metal plasma (IMP) method for forming (111) oriented aluminum containing conductor layer

A method for forming an aluminum containing conductor layer comprising:

• providing a substrate;
• forming over the substrate a titanium layer having a thickness of from about 80 to 200 Å and employing an ionized metal plasma bias sputtering method;
• the ionized metal plasma bias sputtering method employing:
• a reactor chamber pressure of from about 10 to about 30 mTorr;
• a radio frequency induced plasma source power of from about 1000 to about 3000 watts at a radio frequency of 13.56 MHz;
• a DC bias sputtering power of from about 1000 to about 3000 watts;
• a substrate temperature of from about 100 to about 300 degrees centigrade;
• an argon sputtering gas flow rate of from about 30 to about 100 sccm;
• and
• a titanium target to substrate spacing of from about 125 to about 140 mm;
• and
• forming upon the titanium layer a titanium nitride layer;
• forming upon the titanium nitride layer an aluminum containing conductor layer.

A method for forming an aluminum containing conductor layer comprising:

• providing a substrate;
• forming over the substrate a titanium layer employing an ionized metal plasma bias sputtering method employing:
• a reactor chamber pressure of from about 10 to about 30 mTorr;
• a radio frequency induced plasma source power of from about 1000 to about 3000 watts at a radio frequency of 13.56 MHz;
• a DC bias sputtering power of from about 1000 to about 3000 watts;
• a substrate temperature of from about 100 to about 300 degrees centigrade;
• an argon sputtering gas flow rate of from about 30 to about 100 sccm;
• and
• a titanium target to substrate spacing of from about 125 to about 140 mm;
• and
• forming upon the titanium layer an aluminum containing conductor layer;
• said titanium layer having a thickness greater than about 100Å.

A method for forming an aluminum containing conductor layer comprising:

• providing a substrate;
• forming over the substrate a titanium layer employing an ionized metal plasma bias sputtering method;
• forming upon the titanium layer a titanium nitride layer formed by a PVD sputtering method employing:
• a reactor chamber pressure of from about 2 to about 10 mTorr;
• a bias sputtering power of from about 2000 to about 10000 watts without any plasma activation;
• a substrate temperature of from about 20 to about 200 degrees centigrade;
• an argon sputtering gas flow rate of from about 20 to about 80 sccm;
• and
• a titanium nitride target to substrate spacing of from about 40 to about 60 mm;
• and
• forming upon the titanium nitride layer an aluminum containing conductor layer.

A method for forming an aluminum containing conductor layer comprising:

• providing a substrate;
• forming over the substrate a titanium layer employing an ionized metal plasma bias sputtering method;
• forming upon the titanium layer a titanium nitride layer;
• forming upon the titanium nitride layer an aluminum containing conductor layer the aluminum containing conductor layer being formed by a bias sputtering method employing:
• a reactor chamber pressure of from about 3 to about 8 mTorr;
• a bias sputtering power of from about 4000 to about 12000 watts without any plasma activation;
• a substrate temperature of from about 200 to about 400 degrees centigrade;
• an argon sputtering gas flow rate of from about 40 to about 100 sccm;
• and
• an aluminum-containing target to substrate spacing of from about 40 to about 60 mm.