Back to results
US 6,207,561 B1Granted
Selective oxidation methods for metal oxide deposition on metals in capacitor fabrication
AssigneeTexas Instruments Incorporated
InventorsMing Hwang, Robert Tsu, Wei-Yung Hsu
Life of this patent
Estimating the term…
Abstract
A cost-effective method for fabricating MIM capacitors (120). After metal (106) deposition, the metal oxide (108) is formed using an oxidation chemistry that includes CO2 and H2. The CO2/H2 gas ratio is controlled for selective oxidation. Thus, the metal (106) is effectively protected from oxidation due to the existence of both H2 and CO2 as strong reduction reagent.
Claims18
A method of forming an integrated circuit, comprising the steps of:
- forming a metal layer over a structure;
- depositing a metal-oxide layer by selectively oxidizing a metal-bearing precursor in the presence of CO2 and H2 to form the metal-oxide layer over at least a portion of said metal layer while substantially protecting said metal layer from oxidation.
A method of fabricating a capacitor on an integrated circuit comprising the steps of:
- forming a diffusing barrier over a semiconductor body and over a portion of a dielectric formed over the semiconductor body;
- forming a first metal electrode over said diffusion barrier;
- forming a metal-oxide layer over said first metal electrode by selective oxidation of a metal-bearing precursor, using a chemistry that comprises CO2 and H2 to substantially protect said first metal electrode from oxidation;
- and
- forming a second metal electrode over said metal-oxide layer.
2 more elements
Dependencies are inferred from the claim text.