US 6,207,557 B1 · Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same

Abstract

A method of forming a multilayer titanium nitride film hardly containing any Cl component by a multiple step chemical vapor deposition method, and a method of manufacturing a semiconductor device using the same are provided. In the present invention, a multilayer TiN film is formed by multiple step chemical vapor deposition (CVD) on a semiconductor substrate on which an underlayer is formed. In order to form the multilayer TiN film, an underlayer protective TiN film is formed by forming a first TiN film on the underlayer and NH3 annealing the first TiN film. A main TiN film is formed by forming a second TiN film on the underlayer protective TiN film and NH3 annealing the second TiN film. A source gas used in order to form the first TiN film has a smaller TiCl4 to NH3 gas flow ratio than a source gas for forming the second TiN film. In order to apply the multilayer TiN film to the fabrication of the semiconductor device, an insulating film having a contact hole is formed on a semiconductor substrate. A Ti film is formed on the inner wall of the contact hole. A multilayer TiN film is formed on the Ti film by the multiple step CVD method. A metal plug is formed on the multilayer TiN film.

Claims16

Dependent claims

A method of forming titanium nitride composite layer, comprising the steps of:

depositing a first titanium nitride layer on a substrate by exposing the substrate to a first composite gas consisting essentially of TiCl4 and NH3 at respective first levels that establish a first ratio of TiCl4 to NH3 in a range between about 0.02 and 0.05 so that a ratio of chlorine atoms to nitrogen atoms in the first composite gas is in a range between about 0.08 and 0.2;
annealing the first titanium nitride layer by exposing the first titanium nitride layer to a gas consisting essentially of NH3;
and
depositing a second titanium nitride layer on the first titanium nitride layer by exposing the first titanium nitride layer to a second composite gas consisting essentially of TiCl4 and NH3 at respective second levels that establish a second ratio of TiCl4 to NH3 that is greater than the first ratio.

1 more element

Dependencies are inferred from the claim text.

Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same

Life of this patent

Method of forming multilayer titanium nitride film by multiple step chemical vapor deposition process and method of manufacturing semiconductor device using the same

Life of this patent

Abstract

Claims16