Method for manufacturing high performance MOSFET device with raised source and drain
AssigneeInternational Business Machines Corporation
InventorsToshiharu Furukawa, Mark C. Hakey, Steven J. Holmes, David V. Horak, William H. Ma, Jack A. Mandelman
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Abstract
A MOSFET device and a method of manufacturing the device. The device has a trench formed in a silicon substrate. The channel of the device is at the bottom of the trench. Diffusion layers are formed adjacent to opposite sides of the trench. Each diffusion layer is connected to the edge of the device channel by extending the diffusion layer along the side wall of the trench and under a portion of the trench.
Claims14
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) providing a substrate;
- (b) doping a surface of the substrate to a first depth to form a diffusion layer;
- (c) forming a trench in the surface of the substrate wherein the trench has sidewalls, a bottom, and a depth greater than the first depth;
- and
- (d) doping the substrate adjacent the sidewalls of the trench and under a portion of the bottom of the trench to form a diffusion extension extending from the diffusion layer, along the sidewalls of the trench, and under the portion of the bottom of the trench by depositing a diffusible dopant layer containing a diffusible element in the trench and causing the diffusion of the diffusible element into the substrate adjacent the sidewalls of the trench and the portion of the bottom of the trench.
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) providing a substrate;
- (b) doping a surface of the substrate to a first depth to form a diffusion layer;
- (c) forming a trench in the surface of the substrate, by defining a trench pattern using one of a hybrid resist technique or phase-edge lithography and etching the trench into the substrate according to the trench pattern, wherein the trench has sidewalls, a bottom, and a depth greater than the first depth;
- and
- (d) doping the substrate adjacent the sidewalls of the trench and under a portion of the bottom of the trench to form a diffusion extension extending from the diffusion layer, along the sidewalls of the trench, and under the portion of the bottom of the trench.
A method for manufacturing a semiconductor device, comprising the steps of:
- (a) providing a substrate;
- (b) doping a surface of the substrate to a first depth to form a diffusion layer;
- (c) forming a trench in the surface of the substrate by defining a trench pattern and then etching the trench into the substrate according to the trench pattern, wherein the trench has sidewalls, a bottom, and a depth greater than the first depth;
- (d) doping the substrate adjacent the sidewalls of the trench and under a portion of the bottom of the trench by depositing a diffusible dopant layer containing a diffusible element in the trench and annealing the diffusible dopant layer and the substrate so the diffusible element diffuses into the substrate adjacent the sidewalls and under a portion of the bottom of the trench to form a diffusion extension extending from the diffusion layer, along the sidewalls of the trench, and under the portion of the bottom of the trench;
- (e) forming a dielectric layer on the sidewalls and the bottom of the trench;
- and
- (f) disposing a conductor in the trench separated from the substrate and from the annealed diffusible layer by the dielectric layer.
Dependencies are inferred from the claim text.