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US 6,207,528 B1Granted
Method for fabricating capacitor of semiconductor device
AssigneeHyundai Electronics Industries Co., Ltd.
InventorKee-jeung Lee
Life of this patent
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Abstract
The invention relates to a method for fabricating a capacitor of a semiconductor device with greater capacitance by adding an aluminum containing compound in the process of depositing an amorphous Ta2O5 layer in a LPCVD chamber, differently from the conventional method, thereby obtaining a material Ta2O5—Al2O3 for forming a dielectric layer with higher structural stability and dielectric constant than the Ta2O5 layer.
Claims29
A method for fabricating a capacitor of a semiconductor device comprising the steps of:
- forming a hemispherical polysilicon layer on a bottom electrode of a storage node;
- nitrifying the surface of the polysilicon layer for preventing formation of a natural oxide layer on the hemispherical polysilicon layer;
- forming a Ta2O5—Al2O3 layer as a dielectric layer on the surface nitrified polysilicon layer;
- and
- forming a plate electrode by depositing metal on the Ta2O5—Al2O3 layer.
2 more elements
Dependencies are inferred from the claim text.