Rapid thermal anneal with a gaseous dopant species for formation of lightly doped regions
AssigneeAdvanced Micro Devices, Inc.
InventorsMark I. Gardner, H. Jim Fulford
Life of this patent
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Abstract
Rapid thermal anneal with a gaseous dopant species for formation of a shallow lightly doped region is disclosed. In one embodiment of the invention, a method includes four steps. In the first step, at least one layer is applied over at least one gate over a semiconductor substrate. In the second step, an ion implantation is performed to form source and drain regions within the substrate. In the third step, the layers are removed. In the fourth step, a rapid thermal anneal with a gaseous dopant species is performed to form lightly doped regions within the substrate.
Claims14
A method for forming a device comprising:
- applying at least one layer over at least one gate over a semiconductor substrate;
- depositing a first mask over the at least one gate and forming spacers from the first mask along either side of said at least one gate;
- performing an ion implantation to form source and drain regions within the substrate while using the spacers to prevent ion implantation within the substrate immediately adjacent the at least one gate;
- removing the at least one layer.
- performing a rapid thermal anneal with a charged gaseous dopant species to form lightly doped regions within the substrate;
- and
- subsequent to performing the rapid thermal anneal,
- removing the first mask from the first gate, and
- depositing a second mask over the second gate.
Dependencies are inferred from the claim text.