Self-aligned trenched-channel lateral-current-flow transistor

A method of fabricating a transistor, comprising the steps of:

• forming a disposable gate over a lightly doped semiconductor layer;
• forming source and drain regions in said lightly doped semiconductor layer self-aligned to said disposable gate;
• forming a dielectric layer over said source and drain regions, said dielectric layer not extending over said disposable gate;
• placing a slot pattern over said disposable gate;
• etching said disposable gate using said slot pattern to create at least one disposable gate strip;
• removing said slot pattern;
• etching said lightly doped semiconductor layer using said at least one disposable gate strip as a mask to form at least one channel strip;
• forming a gate over said at least one channel strip and along sidewalls of said at least one channel strip.