Semiconductor device, method of fabricating the same, and sputtering apparatus
AssigneeOki Electric Industry Co., Ltd.
InventorShinichi Hoshi
Life of this patent
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Abstract
A method of fabricating a semiconductor device comprises the steps of: (a) forming a mask layer over an upper surface of a semiconductor substrate such that the mask layer has an aperture penetrating the mask layer and having an inclined lateral wall so as to make the aperture inverted taper shaped; (b) forming a first dielectric layer at a first area over the upper surface of the semiconductor substrate within the aperture by sputtering at a first sputtering incidence direction; and (c) forming a first electrode layer at a second area over the upper surface of the semiconductor substrate within the aperture by sputtering at a second sputtering incidence direction which is different from the first sputtering incidence direction.
Claims9
A method of fabricating a capacitor of a semiconductor device comprising the steps of:
- (a) forming a metal electrode layer over an upper surface of a semiconductor substrate;
- (b) forming a mask layer over said upper surface of said semiconductor substrate such that said mask layer has an aperture penetrating said mask layer and has an inclined lateral wall so as to make said aperture inverted taper shaped, said metal electrode layer having an upper surface exposed in said aperture of said mask layer;
- (c) forming a first dielectric layer at a first area over said upper surface of said semiconductor substrate and said upper surface of said metal electrode layer within said aperture by sputtering at a first sputtering incidence direction;
- and
- (d) forming a first electrode layer at a second area over an upper surface of said first dielectric layer and said upper surface of said metal electrode layer within said aperture by sputtering at a second sputtering incidence direction which is different from said first sputtering incidence direction.
Dependencies are inferred from the claim text.