Method of forming capacitor of semiconductor device

A method of forming a capacitor of semiconductor devices comprising the steps of:

• forming a first insulating layer having a plurality of contact holes on a semiconductor substrate;
• forming a plug in each of the contact holes;
• forming a second insulating layer on the entire surface of the semiconductor substrate;
• sequentially forming first and second mask layers on the second insulating layer;
• selectively removing the second mask layer to form a plurality of first mask patterns having a first line width between the plugs;
• selectively removing each of the first mask patterns to form a second mask patterns having a second line width smaller than the first line width;
• patterning the first mask layer by using the second mask patterns as a mask;
• removing the second insulating layer by using the first mask layer patterned so as to expose each of the plugs;
• sequentially forming a conductive layer and a third insulating layer on the entire surface of the semiconductor substrate for electrical connection to each plug;
• selectively removing the third insulating layer and the conductive layer overlying the second insulating layer so as to expose the surface of the second insulating layer and forming a lower electrode of capacitor composed of the conductive layer and each plug;
• and
• removing the third insulating layer and the second insulating layer, and forming a dielectric layer and an upper electrode of capacitor on the lower electrode of capacitor.