Method for manufacturing capacitor of semiconductor memory device having tantalum oxide film

Abstract

A method for manufacturing a capacitor having a dielectric film formed of a tantalum oxide film. The method includes forming a lower electrode that is electrically connected to an active region of a semiconductor substrate. A pre-treatment film including a component selected from a group consisting of silicon oxide, silicon nitride, and combinations thereof, is formed on the surface of the lower electrode. A dielectric film is formed on the pre-treatment film using a Ta precursor. The dielectric film includes a first dielectric layer deposited at a first temperature selected from a designated temperature range, and a second dielectric layer deposited at a second temperature different from the first temperature and selected from the same designated temperature range. A thermal treatment is thereafter performed on the dielectric film in an oxygen atmosphere.

Dependencies are inferred from the claim text.