Semiconductor device and a method of manufacturing the same

A method of manufacturing a semiconductor device, comprising:

• forming a gate electrode adjacent to a main surface of a semiconductor substrate;
• forming a source and a drain electrode in the main surface of the semiconductor substrate, the gate electrode disposed between the source electrode and the drain electrode;
• forming a first nitride layer over one of the gate electrode, the source electrode, and the drain electrode, the first nitride layer comprising insulator nitride, the insulator nitride being compound of nitrogen and a material;
• forming an interlayer insulator over the first nitride layer, and the interlayer insulator has a through-hole above one of the gate electrode, the source electrode, and the drain electrode,
• forming a second nitride layer comprising a conductive nitride, the second nitride layer being at a bottom of the through-hole;
• and
• forming a wiring layer in the through-hole, the wiring layer coupled to one of the gate electrode, the source electrode, and the drain electrode, through the second nitride layer,
• wherein forming the second nitride layer comprises forming a conductive layer comprising a metal on the first nitride layer at the bottom of the through-hole after cutting bond between the nitrogen and the material of the insulator nitride, and bonding the cut nitrogen and the metal to form the conductive nitride.

A method of manufacturing a semiconductor device, comprising:

• forming a gate electrode adjacent to a main surface of a semiconductor substrate;
• forming a source and a drain electrode in the main surface of the semiconductor substrate, the gate electrode disposed between the source electrode and the drain electrode;
• forming a first nitride layer over one of the gate electrode, the source electrode, and the drain electrode, the first nitride layer comprising insulator nitride, the insulator nitride being compound of nitrogen and a material;
• forming an interlayer insulator over the first nitride layer, and the interlayer insulator has a through-hole above one of the gate electrode, the source electrode, and the drain electrode;
• forming a second nitride layer comprising a conductive nitride, the second nitride layer being at a bottom of the through-hole;
• forming a wiring layer in the through-hole, the wiring layer coupled to one of the gate electrode, the source electrode, and the drain electrode, through the second nitride layer;
• and
• forming the through-hole by selectively etching part of the insulator nitride layer to expose top surface of the insulator nitride layer,
• wherein etching rate of the interlayer insulator layer and the first nitride layer are different from each other.

A method of manufacturing a semiconductor device, comprising:

• forming a first wiring layer or an electrode adjacent to a first insulator layer;
• forming a first nitride layer comprising a insulator nitride over the first wiring layer or the electrode, and the first insulator layer, the insulator nitride is compound of nitrogen and a material;
• forming a second nitride layer comprising conductive nitride, the second nitride layer being on the first wiring layer or the electrode, and the first insulator layer;
• and
• forming a second wiring layer on the second nitride layer, the second wiring layer being coupled to the first wiring layer or the electrode through the second nitride layer,
• wherein bonding energy of the conductive nitride is higher than that of the insulator nitride.

A method of manufacturing a semiconductor device, comprising:

• forming a first wiring layer or an electrode adjacent to a first insulator layer;
• forming a first nitride layer comprising a insulator nitride over the first wiring layer or the electrode, and the first insulator layer, the insulator nitride is compound of nitrogen and a material;
• forming a second nitride layer comprising conductive nitride, the second nitride layer being on the first wiring layer or the electrode, and the first insulator layer;
• and
• forming a second wiring layer on the second nitride layer, the second wiring layer being coupled to the first wiring layer or the electrode through the second nitride layer,
• wherein forming the second nitride layer comprises forming a conductive layer comprising a metal on the first nitride layer cutting bond between the nitrogen and the material of the insulator nitride, and bonding the cut nitrogen and the metal to form the conductive nitride.

A method of manufacturing a semiconductor device, comprising:

• forming a first wiring layer or an electrode adjacent to a first insulator layer;
• forming a first nitride layer comprising a insulator nitride over the first wiring layer or the electrode, and the first insulator layer, the insulator nitride is compound of nitrogen and a material;
• forming a second nitride layer comprising conductive nitride, the second nitride layer being on the first wiring layer or the electrode, and the first insulator layer;
• and
• forming a second wiring layer on the second nitride layer, the second wiring layer being coupled to the first wiring layer or the electrode through the second nitride layer,
• wherein etching rate of the interlayer insulator layer and the first nitride layer are different from each other, and further comprising forming the through-hole by selectively etching part of the insulator nitride layer to expose top surface of the insulator nitride layer.

A method of manufacturing a semiconductor device, comprising:

• forming a gate electrode adjacent to a main surface of a semiconductor substrate;
• forming a source and a drain electrode in the main surface of the semiconductor substrate, the gate electrode disposed between the source electrode and the drain electrode;
• forming a first nitride layer over one of the gate electrode, the source electrode, and the drain electrode, the first nitride layer comprising insulator nitride, the insulator nitride being compound of nitrogen and a material;
• forming an interlayer insulator over the first nitride layer, and the interlayer insulator has a through-hole above one of the gate electrode, the source electrode, and the drain electrode;
• forming a conductive layer comprising a metal on the first nitride layer at the bottom of the through-hole after ion implantation process selectively into the first nitride layer at the bottom of the through-hole, the ion implantation process using the interlayer insulator layer as a mask layer;
• forming a second nitride layer comprising a conductive nitride being compound of nitrogen and the metal;
• and
• forming a wiring layer in the through-hole, the wiring layer coupled to one of the gate electrode, the source electrode, and the drain electrode, through the second nitride layer.

A method of manufacturing a semiconductor device, comprising:

• forming a first wiring layer or an electrode adjacent to a first insulator layer;
• forming a first nitride layer comprising a insulator nitride over the first wiring layer or the electrode, and the first insulator layer, the insulator nitride is compound of nitrogen and a material;
• forming a conductive layer comprising a metal on the first nitride layer after ion implantation process selectively into the first nitride layer at the bottom of the through-hole, the ion implantation process followed forming the conductive layer comprising the metal without interposed annealing process;
• forming a second nitride layer comprising conductive nitride being compound of nitrogen and the metal;
• and
• forming a second wiring layer on the second nitride layer, the second wiring layer being coupled to the first wiring layer or the electrode through the second nitride layer.