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US 6,207,481 B1Granted
Thin film transistor having a crystallization seed layer and a method for manufacturing thereof
AssigneeLG. Phillips LCD Co., Ltd.
InventorsJong-Hoon Yi, Sang-Gul Lee
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Abstract
A thin film transistor and a method of manufaturing a thin film transistor are such that a crystallization seed layer is included in the transistor to crystallize the amorphous silicon to polysilicon.
Claims16
A method of manufacturing a thin film transistor comprising the steps of:
- depositing amorphous silicon on a substrate and patterning the deposited amorphous silicon to form an active layer;
- forming a block layer substantially centrally located on the active layer to function as a mask during an impurity doping process so that a channel region is defined in a approximately central portion in the active layer;
- silicidizing an exposed surface of the active layer to form a crystallization seed layer, and, thereafter, removing the block layer;
- forming a gate insulating layer on the substrate so that the gate insulating layer covers the active layer and the crystallization seed layer;
- defining a gate electrode on the gate insulating layer so that the gate electrode is located substantially on a portion which corresponds to the channel region of the active layer, and wherein the gate electrode overlaps with a portion of the crystallization seed layer;
- and
- heavily doping impurities in the active layer using the gate electrode as a mask to form source and drain regions in the active layer, and converting the active layer from amorphous silicon to polysilicon through a metal induced lateral crystallization process caused by the crystallization seed layer.
4 more elements
A method of manufacturing a thin film transistor comprising the steps of:
- forming buried source and drain layers on a portion of a substrate;
- forming a buffer layer on the substrate so as to cover the buried source and drain layers;
- depositing amorphous silicon on the buffer layer and patterning the deposited amorphous silicon to form an active layer;
- forming a block layer on an approximately central portion of the active layer, wherein the block layer functions as a mask during a doping process to define a channel region in the active layer, and, wherein the block layer is made of silicon nitride or silicon oxide having a different etching selection ratio than the buffer layer;
- and
- silicidizing an exposed surface of the active layer to form a crystallization seed layer, and, thereafter, removing the block layer.
3 more elements
A method of manufacturing a thin film transistor comprising the steps of:
- depositing amorphous silicon on a substrate and patterning the deposited amorphous silicon to form an active layer;
- forming a block layer at an approximately central portion on the active layer, and using the block layer as a mask during a doping process to define a channel region in the active layer;
- silicidizing an exposed surface of the active layer to form a crystallization seed layer, and, thereafter, removing the block layer;
- forming a gate insulating layer on the substrate so as to cover the active layer and the crystallization seed layer;
- forming a gate electrode on the gate insulating layer so that the gate electrode is located substantially on a portion which corresponds to the channel region of the active layer, and wherein the gate electrode also overlaps with a portion of the crystallization seed layer;
- heavily doping impurities into the active layer using the gate electrode as a mask to form a source region and a drain region;
- and
- forming an insulating layer on the gate insulating layer to cover the gate electrode;
- converting the active layer from amorphous silicon to polysilicon through a metal induced lateral crystallization process caused by the crystallization seed layer.
6 more elements
Dependencies are inferred from the claim text.