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US 6,207,469 B1Granted
Method for manufacturing a semiconductor device
AssigneePioneer Electronic Corporation
InventorsHiroyuki Ota, Yoshinori Kimura, Mamoru Miyachi
Life of this patent
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Abstract
A GaN type semiconductor layer in which a group 2 impurity element is added is formed. The GaN type semiconductor layer is heated at a predetermined temperature, while irradiating the semiconductor layer with an electromagnetic wave having an energy larger than the band gap energy of the GaN type semiconductor layer.
Claims9
A method for manufacturing a semiconductor device, the steps comprising:
- forming a GaN type semiconductor layer in which a group 2 impurity element is added;
- heating the GaN type semiconductor layer at a predetermined temperature, and irradiating the semiconductor layer with an electromagnetic wave having an energy larger than the band gap energy of the GaN type semiconductor layer;
- and
- forming an electrode on the semiconductor layer.
1 more element
Dependencies are inferred from the claim text.