Layer-structured oxide and process of producing the same
AssigneeSony Corporation
InventorsMasayuki Suzuki, Naomi Nagasawa, Akio Machida, Takaaki Ami
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AssigneeSony Corporation
InventorsMasayuki Suzuki, Naomi Nagasawa, Akio Machida, Takaaki Ami
Estimating the term…
A layer-structured oxide exhibiting a paraelectric characteristic and a layer-structured oxide having a preferable remanent polarization, and a process of producing the same. A layer-structured oxide containing Bi, a first component Me, a second component R, and O is produced by heating raw materials at a high temperature of about 1400° C. for several ten minutes by a self-flux method using Bi2O3 as a flux. The first component Me is composed of at least one kind selected from a group consisting of Sr, Pb, Ba, and Ca, and the second component R is composed of at least one kind selected from a group consisting of Nb and Ta. The composition formula of the oxide is expressed by Bi2−aMe1+bR2O9+c where a, b, and c are values in ranges of 0<a<2, 0<b≦0.4, and −0.3≦c≦1.4. The layer-structured oxide exhibits a paraelectric characteristic or a ferroelectric characteristic at a composition in a specific range out of the stoichiometric composition.
A layer-structured oxide containing bismuth (Bi), strontium (Sr), tantalum (Ta), and oxygen (O) said oxide being paraelectric, wherein a composition formula of said oxide is expressed by Bi1.92Sr1.10Ta2.00O9.
A layer-structured oxide containing bismuth (Bi), strontium (Sr), tantalum (Ta), and oxygen (O), said oxide being paraelectric, wherein a composition formula of said oxide is expressed by Bi2−aSr1+bTa2O9+C where a, b, and c are values in ranges of 0<a≦0.2, 0<b≦0.3, and −0.3≦c≦0.3.
A process of producing a paraelectric, layer-structured oxide having a composition formula expressed by Bi1.92Sr1.10Ta2.00O9, said process comprising the step of producing said oxide by a self-flux method using bismuth oxide as a flux.
A process of producing a paraelectric, layer-structured oxide having a composition formula expressed by Bi2−aSr1+bTa2O9+C where a, b, and c are values in ranges of 0<a≦0.2, 0<b≦0.3, and −0.3≦c≦0.3, said process comprising the step of producing said oxide by a self-flux method using bismuth oxide as a flux.
Dependencies are inferred from the claim text.