Plasma processing system
AssigneesTokyo Electron Limited, Toshiaki Makabe
InventorsSumie Segawa, Toshiaki Makabe
Life of this patent
Estimating the term…
Loading patent…
AssigneesTokyo Electron Limited, Toshiaki Makabe
InventorsSumie Segawa, Toshiaki Makabe
Estimating the term…
A plasma processing system controls the electronegativity of a plasma produced by ionizing a process gas when processing a substrate by using the plasma. The relation between the pressure in a processing vessel (1) and the frequency of a RF power source (11′), and the electronegativity of the plasma produced by the agency of RF power is determined beforehand. A controller (18) adjusts the pressure in the processing vessel (1) and/or the frequency of the RF power source (11′) in a real-time control mode by a feedback control operation on the basis of a pressure measured by a pressure sensor (17) and a frequency measured by a frequency meter (15) to adjust the electronegativity of the plasma to an appropriate value. The electronegativity of the plasma can be determined through simulation using a one-dimensional RCT model of the plasma.
A plasma processing system for carrying out a plasma process for processing a substrate by using a plasma produced by ionizing a process gas, said plasma processing system comprising:
A plasma processing system for carrying out a plasma process for processing a substrate by using a plasma produced by ionizing a process gas, said plasma processing system comprising:
A controller for controlling a plasma processing system for processing a substrate by a plasma process using a plasma produced by RF power in a processing vessel, said controller comprising:
Dependencies are inferred from the claim text.