Cluster tool apparatus using plasma immersion ion implantation

An apparatus for processing substrates, said apparatus comprising:

• a transfer chamber comprising a robot therein;
• a plasma immersion ion implantation chamber (“PIII”) coupled to said transfer chamber;
• a controlled cleaving process (CCP) chamber adapted to provide energy to a selected region of a substrate to initiate a controlled cleaving action, the CCP chamber adapted to provide energy from a thermal source or sink, a mechanical source, a chemical source, or an electrical source, and
• at least a third chamber coupled to said transfer chamber, whereby the transfer chamber permits a plurality of process steps on a plurality of wafers in the other chambers without breaking vacuum.