A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films
AssigneeKabushiki Kaisha Kobe Seiko Sho
InventorsTakashi Onishi, Kazuo Yoshikawa, Seiji Nishi, Seigou Yamamoto
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Abstract
An Al alloy film containing one kind or two or more kinds of alloy components selected from a group of Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and Mn in a total amount of 0.1 to 10 at %, and a melting Al alloy sputtering target for depositing the Al alloy film, wherein the above-mentioned film is used as a reflection film for an optical recording medium, a shading film for a liquid crystal display panel or for a solid image pickup device, and an Al alloy thin film line or electrode material for a semiconductor device.
Claims11
A sputtering target, comprising Al and 0.1 to 10 at. % of at least one alloy component selected from the group consisting of Ti, Zr, and Hf,
- wherein said target comprises one or more intermetallic compounds comprising said at least one alloy component and Al, homogeneously distributed in said Al, and
- said one or more intermetallic compounds are needle-shaped and have a lateral dimension of less than 200 μm.
A sputtering target, comprising Al and 0.1 to 10 at. % of at least one alloy component selected from the group consisting of Zr and Hf,
- wherein said target comprises one or more intermetallic compounds comprising said at least one alloy component and Al, homogeneously distributed in said Al, and
- said one or more intermetallic compounds are needle-shaped and have a lateral dimension of less than 200 μm.
A sputtering target, consisting essentially of Al and 0.1 to 10 at. % of at least one alloy component selected from the group consisting of Ti, Zr, and Hf,
- wherein said target consists essentially of one or more intermetallic compounds comprising said at least one alloy component and Al, homogeneously distributed in said Al, and
- said one or more intermetallic compounds are needle-shaped and have a lateral dimension of less than 200 μm.
Dependencies are inferred from the claim text.