Semiconductor memory device with fast input/output line precharge scheme and method of precharging input/output lines thereof
AssigneeSamsung Electronics Co., Ltd.
InventorByung Chul Kim
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AssigneeSamsung Electronics Co., Ltd.
InventorByung Chul Kim
Estimating the term…
A semiconductor memory device precharges IO lines of the device rapidly at a write interrupt in normal and full page modes. The device includes a write interrupt detector, a precharge signal generator, and a precharge circuit. The write interrupt detector detects whether signals indicating a write interrupt in the normal mode are from the outside, and then generates a write interrupt detection signal. The precharge signal generator generates first and second precharge signals in response to the write interrupt detection signal, and the precharge circuit precharges IO lines at both sides of a memory cell array of the device before a read or write operation in the normal mode in response to the first and second precharge signals. Since the address access time of the semiconductor memory device is short, a high-speed semiconductor memory device can be implemented using the present invention.
semiconductor memory device comprising:
A semiconductor memory device comprising:
Dependencies are inferred from the claim text.