Dram array with gridded sense amplifier power source for enhanced column repair
AssigneeMicron Technology, Inc.
InventorBrian Shirley
Life of this patent
Estimating the term…
Abstract
An apparatus for the supply of power to a gridded array of sense amplifier circuits contained within a memory, e.g., a DRAM, is provided. When the column sensed is operating normally the power source supplies a first voltage to the sense amplifier circuits so that they properly latch the state of an addressed memory cell. When a column has been repaired out the apparatus is capable of driving the sense amplifier circuits with a second voltage so that they are prevented from latching the state of an addressed memory cell, thus avoiding the problems attributable to short circuits between bit and word lines and between the cell plate and bit lines of a memory cell array.
Claims20
A method of correcting for a short circuit in a memory device, said method comprising:
- providing a sense amplifier circuit connected to a column of the memory device for latching a logic state of an addressed memory cell;
- providing a switchable voltage source circuit having a first output;
- providing a first conductor line connected between said first output and said sense amplifier circuit;
- and
- selectively switching said voltage source circuit between a first voltage and a second voltage, wherein said first voltage is selected when said column is operational and said second voltage is selected when said column has been repaired out,
- wherein when said first voltage is selected, said first voltage is applied to said sense amplifier circuit and causes said sense amplifier circuit to properly latch said logic state of said addressed memory cell through said column, and wherein when said second voltage is selected, said second voltage is applied to said sense amplifier circuit and prevents said sense amplifier circuit from latching said logic state of said addressed memory cell through said column.
Dependencies are inferred from the claim text.