US 6,205,056 B1Granted

Automated reference cell trimming verify

AssigneeAdvanced Micro Devices, Inc.

InventorsFeng Pan, Colin S. Bill

Life of this patent

Estimating the term…

Loading patent…

Abstract

A reference trimming verify circuit and method is provided for performing a program verify operation on a reference cell transistor in an array of Flash EEPROM memory cells. A reference current branch is used to generate a reference current corresponding to a predetermined overdrive voltage of the reference cell to be programmed. A drain current branch is coupled to the reference cell transistor to be programmed and generates a drain current at a fixed gate voltage applied to its control gate and at a predetermined drain voltage applied to its drain when the drain current is at the desired level. A comparator is used to compare a sensed voltage corresponding to the drain current and a reference voltage corresponding to the reference current. The comparator generates an output signal which is at a low logic level when the sensed voltage is less than the reference voltage and which is at a high logic level when the sensed voltage is greater than the reference voltage. A program pulse is applied to the reference transistor each time the comparator generates the low logic level and terminates the program pulse when the comparator generates the high logic level.

Claims10

Dependent claims

A reference cell trimming verify circuit for performing a program verify operation on a reference cell transistor in an array of Flash EEPROM memory cells, said trimming circuit comprising:

reference current branch means for generating a reference current corresponding to a predetermined overdrive voltage of the reference cell transistor to be programmed;
drain current branch means coupled to the reference cell transistor to be programmed for generating a drain current at a fixed gate voltage applied to its control gate and at a predetermined drain voltage applied to its drain when the drain current is at a desired level;
comparing means for comparing a sensed voltage corresponding to said drain current and a reference voltage corresponding to said reference current and for generating an output signal which is at a low logic level when said sensed voltage is less than said reference voltage and which is at a high logic level when said sensed voltage is higher than said reference voltage;
means for applying a program pulse to said reference transistor each time said comparing means generates the low logic level and terminating said program pulse when said comparing means generates the high logic level;
and
said reference current branch means including a first pass gate transistor and a resistor-divider network formed of a first resistor and a second resistor, the drain/source electrodes of said first pass rate transistor, the first resistor, and the second resistor being connected in series between a first upper power supply potential and a lower power supply potential so as to generate said reference current flowing therethrough, the junction of said first and second resistors generating said reference voltage.

3 more elements

A reference cell trimming verify method for performing a program verify operation on a reference cell transistor in an array of Flash EEPROM memory cells, said trimming method comprising the steps of:

generating a reference current corresponding to a predetermined overdrive voltage of the reference cell transistor to be programmed through a reference current branch;
generating a drain current through a drain current branch coupled to the reference cell transistor to be programmed at a fixed gate voltage applied to its control gate and at a predetermined drain voltage applied to its drain when the drain current is at a desired level;
comparing a sensed voltage corresponding to said drain current and a reference voltage corresponding to said reference;
generating an output signal which is at a low logic level when said sensed voltage is less than said reference voltage and which is at a high logic level when said sensed voltage is higher than said reference voltage;
applying a program pulse to said reference transistor each time said comparing step generates the low logic level and terminating said program pulse when said comparing step generates the high logic level;
providing said reference current branch to include a first pass gate transistor and a resistor-divider network formed of a first resistor and a second resistor;
connecting the drain/source electrodes of said first pass gate transistor, the first resistor, and the second resistor in series between a first upper power supply potential and a lower power supply potential so as to generate said reference current flowing therethrough;
and
generating said reference voltage at the junction of said first and second resistors.

6 more elements

Dependencies are inferred from the claim text.