Dynamic memory cell programming voltage
AssigneeAdvanced Micro Devices, Inc.
InventorAllan Parker
Life of this patent
Estimating the term…
Abstract
A method of programming a memory cell comprises erasing, programming, and determining the pulse count for one or more memory cells. The memory cell(s) is erased. Then, the memory cell is programmed with a first programming voltage. A first pulse count is determined. The first pulse count indicates the number of programming pulses used to program the memory cell with the first programming voltage. The first pulse count is compared with a target pulse count. The programming voltage is stored if the first pulse count compares with the target pulse count. If the first pulse count fails to compare with the target pulse count, the memory cell(s) is programmed with a second programming voltage and the process is repeated until the pulse count compares with the target pulse count.
Claims22
A method of programming a memory cell, comprising:
- erasing the memory cell;
- programming the memory cell with a first programming voltage;
- determining a first pulse count that indicates a number of programming pulses used to program the memory cell with the first programming voltage;
- comparing the first pulse count to a target pulse count;
- storing a programming voltage if the first pulse count compares with the target pulse count;
- programming the memory cell with a second programming voltage and determining a second pulse count if the first pulse count fails to compare with the target pulse count.
A memory device, comprising:
- (a) a memory cell;
- (b) a program voltage tester connectable with the memory cell, the program voltage tester being capable of testing the memory cell to determine a programming voltage that programs the memory cell with a target pulse count;
- and
- (c) a program voltage storage connectable with the program voltage tester, the program voltage storage being capable of storing an indicator of the program voltage, the indicator thereafter determining the program voltage when programming the memory cell.
A memory device, comprising:
- (a) a plurality of memory cells;
- (b) a voltage means for determining programming voltages that program each memory cell with a target pulse count;
- (c) a storage means for storing the programming voltages for each memory cell, the storage means thereafter determining the programming voltages when programming the memory cell.
Dependencies are inferred from the claim text.